Representation of the temperature nano-sensors via cylindrical gate-all-around Si-NW-FET

Document Type: Reasearch Paper

Authors

1 Department of Electrical Engineering, Guilan Science and Research Branch, Islamic Azad University, Guilan, Iran.

2 Department of Electrical Engineering, Roudbar Branch, Islamic Azad University, Roudbar, Iran.

10.7508/ijnd.2015.04.006

Abstract

In this paper, the temperature dependence of some characteristics of cylindrical gate-all-around Si nanowire field effect transistor (GAA-Si-NWFET) is investigated to representing the temperature nano-sensor structures and improving their performance. Firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of GAA-Si-NWFET to propose the temperature nano-sensor circuit. Then the solutions of increasing current temperature sensitivity are discussed by investigating the effects of the oxide thickness and the channel diameter on this parameter. Secondly, in this study, we demonstrate the temperature dependence of the transconductance (gm) and output resistance (ro) of the GAA-Si-NWFET. We have proposed the amplifier circuit as a temperature sensor based on the temperature dependence of these parameters. In addition, we have changed the channel diameter and the oxide thickness to increase the temperature sensitivity of gm and subsequently, temperature sensitivity of proposed sensor. Ultimately, the effects of channel diameter and oxide thickness on the temperature sensitivity of gm will be analytically investigated.

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[1]      Wang J., (2005), device physics and simulation of silicon nanowire transistor. Purdue University.

[2]      Hashim Y., Sidek O., (2012), Effect of temperature on the characteristics of silicon nanowire transistor. J. Nanosci. Nanotechnol. 12: 7849-7852.

[3]      Lwai H., (2009), Nickel silicide contact for Silicon Nanowire FET. Master Thesis.

[4]      Hashim Y., Sidek O., (2011), Temperature effect on I-V characteristics of Si nanowire transistor. IEEE colloquium on humanities science and engineering research.

[5]      Hashim Y., Sidek O., (2012), Characterization of Silicon Nanowire transistor as a temperature nano-sensor device. IEEE International Conference on Control System. Computing and Engineering (ICCSCE).

[6]      Hashim Y., Sidek O., (2012), Simulation study of temperature sensitivity of Silicon nanowire transistors with different types of orientations. IEEJ. T. ELECTR. ELECTR. 7: 458–460.

[7]      Gupta V., Gupta R., Singh R., (2012), Temperature effects on performance of gate all around Si-Nanowire transistor. International Conference on Recent Trends in Engineering & Technology.

[8]      Sacchetto D., Micheli G., Leblebici Y., (2011), Ambipolars in nanowire field effect transistors for low current and temperature sensing. IEEE International Conference on Transducers (11), China.

[9]      Rustagi S., Singh N., Lim Y., Zhang G., Wang, S., Lo, G., Balasubramanian, N., Kwong D. (2007), Low-Temperature transport characteristics and quantum-confinement effects in gate-all-around Si-Nanowire N-MOSFET. IEEE Electron Device Lett. 28: 909 - 912.

[10]  Nakashima A., Sagawa Y., Kimura M., (2011), Thermal Sensor Using Poly-Si Thin-Film Transistor With Widened Detectable Temperature Range. IEEE Electron Device Lett. 32: 333–335.

[11]  Reverter F., Gomez D., Altet J., (2013), On-Chip MOSFET Temperature Sensor for Electrical Characterization of RF Circuits. IEEE Sensors J.13: 3343-3344.

[12]  Wang R.-L., Yu C.-W., Yu C., Liu T.-H., (2012), Temperature sensor using BJT-MOSFET pair. Electron. Lett. 48: 503-504.

[13]  Sedigh Zyiabari S. A., Saghafi K., Faez R., Moravvej farshi M., (2011), Numerical investigation on the temperature dependence of the cylindrical-gate-all-around si-nw-FET.  Mod. Phys. Lett. B. 25: 2269–2278.

[14]  Lundstrom M., Guo J., Nanoscale Transistors: Device Physics, Modeling and Simulation. Springer press.

[15]  Zheng Y., Rivas C., Lake R., Alam Kh., Boyking T., Klimeck G., (2005), Electronic Properties of Silicon Nanowires. IEEE Trans. Electron Devices. 52: 1097 – 1103.