Change of diffused and scattered light with surface roughness of p-type porous Silicon

	Change of diffused and scattered light with surface roughness of p-type porous Silicon
Article 15, Volume 5, Issue 4, Autumn 2014, Page 415-419 PDF (586.44 K)
Document Type: Short Communication
DOI: 10.7508/ijnd.2014.04.014
Authors
F. Alfeel ; F. Awad; I. Alghoraibi; F. Qamar
Department of Physics, Science Faculty, Damascus University, Syria.
Abstract
Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. UV-Vis-NIR Spectrophotometer with integrating sphere accessory used to measure the specular reflectance (R_spec) and scattered light (D_sca) for all samples. Changes of scattered light intensity with σ rms were studied. Theoretical and measured values were compared and they were almost the same.
Keywords
Porous silicon (PS); Porosity p%; Electrochemical etching time; Specular reflectance Rspec; Scattered light Dsca; Surface mean root square roughness (σrms); Atomic force Microscopy (AFM)


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